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| BCW61 Series New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 Top View Mounting Pad Layout .056 (1.43) .052 (1.33) Pin Configuration 1. Base 2. Emitter 3. Collector 0.031 (0.8) 1 2 0.035 (0.9) 0.079 (2.0) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) .045 (1.15) .037 (0.95) 0.037 (0.95) 0.037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking BCW61A = BA Code: BCW61B = BB BCW61C = BC BCW61D = BD Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9/3K per 7" reel (8mm tape), 30K/box Ratings at 25C ambient temperature unless otherwise specified. Features * PNP Silicon Epitaxial Planar Transistors * Suited for low level, low noise, low frequency applications in hybrid cicuits. * Low Current, Low Voltage. * As complementary types, BCW60 Series NPN transistors are recommended. Maximum Ratings & Thermal Characteristics Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Current Base Current (DC) Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Air Note: (1) Mounted on FR-4 printed-ciruit board. Symbol -VCES -VCEO -VEBO -I C -ICM -IB Ptot Tj TSTG RJA Value 32 32 5.0 100 200 50 250 150 -65 to +150 500(1) Unit V V V mA mA mA mW C C C/W Document Number 88171 09-May-02 www.vishay.com 1 BCW61 Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics DC Current Gain at -VCE = 5 V, -IC = at -VCE = 5 V, -IC = at -VCE = 5 V, -IC = at -VCE = 5 V, -IC = at at at at at at at at -VCE = -VCE = -VCE = -VCE = -VCE = -VCE = -VCE = -VCE = 5 V, 5 V, 5 V, 5 V, 1 V, 1 V, 1 V, 1 V, -IC = -IC = -IC = -IC = -IC = -IC = -IC = -IC = 10 10 10 10 2 2 2 2 A A A A Ratings at 25C ambient temperature unless otherwise specified. Symbol BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE -VCEsat -VCEsat -VBEsat -VBEsat -VBE -VBE -VBE -ICES Min. - 30 40 100 120 180 250 380 60 80 100 110 60 120 600 680 600 - - - - - 100 - - - - - - - - - TYP. - - - - - - - - - - - - - - - - 650 550 720 - - - - 4.5 11 2 200 260 330 520 85 480 Max. - - - - 220 310 460 630 - - - - 250 550 850 1050 750 - - 20 20 20 - - - 6 Unit - - - - - - - - - - - - mV mV mV mV mV mV mV nA A nA MHz pF pF dB mA mA mA mA mA mA mA mA 50 50 50 50 Collector-Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.25 mA at -IC = 50 mA, -IB = 1.25 mA Base-Emitter Saturation Voltage at -IC = 10 mA, -IB = 0.25 mA at -IC = 50 mA, -IB = 1.25 mA Base-Emitter Voltage at -VCE = 5 V, -IC = 2 mA at -VCE = 5 V, -IC = 10 A at -VCE = 1 V, -IC = 50 mA Collector-Emiter Cut-off Current at -VCE = 32 V, VEB=0 at -VCE = 32 V, VEB=0, TA = 150C Emitter-Base Cut-off Current at -VEB = 4 V, IC=0 Gain-Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 100 MHz Collector-Base Capacitance at -VCB = 10 V, f = 1 MHZ, IE=0 Emitter-Base Capacitance at -VEB = 0.5 V, f = 1 MHZ, IC=0 Noise Figure at -VCE = 5 V, -IC = 200 A, RS = 2 k, f = 100 kHZ, B = 200Hz Small Signal Current Gain at -VCE = 5V, -IC = 2 mA, f = 1.0 kHZ BCW60A BCW60B BCW60C BCW60D -IEBO fT CCBO CEBO F hfe Turn-on Time at RL = 990 (see fig. 1) - VCC = 10V, -Ic = 10mA, -IB(on) = IB(off) = 1mA Turn-off Time at RL = 990 (see fig. 1) - VCC = 10V, -Ic = 10mA, -IB(on) = IB(off) = 1mA ton toff 150 800 ns ns www.vishay.com 2 Document Number 88171 09-May-02 BCW61 Series Vishay Semiconductors formerly General Semiconductor Fig. 1 - Switching Waveforms 10% INPUT 90% t on t off 10% OUTPUT 90% 10% td t r ts tf 90% Document Number 88171 09-May-02 www.vishay.com 3 |
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